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TGA2814-SM - GaN Power Amplifier

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Datasheet Details

Part number TGA2814-SM
Manufacturer TriQuint Semiconductor
File Size 1.22 MB
Description GaN Power Amplifier
Datasheet download datasheet TGA2814-SM Datasheet

General Description

TriQuint’s TGA2814-SM is a high-power, S-band amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25).The TGA2814-SM covers 3.1 – 3.5 GHz and provides > 80 W of saturated output power, 24 dB of large-signal gain, and achieves 55 % power-added efficiency.

The TGA2814-SM can also support a variety of operating conditions to best support system requirements.

With good thermal properties, it can support a range of bias voltages and performs well under pulse operation.

Overview

Applications • Military Radar • Commercial Radar • Wideband Amplifiers TGA2814-SM 3.1 – 3.

Key Features

  • Frequency Range: 3.1.
  • 3.5 GHz.
  • Output Power: 49.5 dBm (at Pin = 25 dBm).
  • Power Gain > 24 dB (at Pin = 25 dBm).
  • PAE: 55% (at Pin = 25 dBm).
  • Bias: VD = 30 V, IDQ = 200 mA, VG =.
  • 2.90 V Typical.
  • Package Dimensions: 7.0 x 7.0 x 0.85 mm General.

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