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TGA2814-SM - GaN Power Amplifier

Datasheet Summary

Description

TriQuint’s TGA2814-SM is a high-power, S-band amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25).The TGA2814-SM covers 3.1

3.5 GHz and provides > 80 W of saturated output power, 24 dB of large-signal gain, and achieves 55 % power-added efficiency.

Features

  • Frequency Range: 3.1.
  • 3.5 GHz.
  • Output Power: 49.5 dBm (at Pin = 25 dBm).
  • Power Gain > 24 dB (at Pin = 25 dBm).
  • PAE: 55% (at Pin = 25 dBm).
  • Bias: VD = 30 V, IDQ = 200 mA, VG =.
  • 2.90 V Typical.
  • Package Dimensions: 7.0 x 7.0 x 0.85 mm General.

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Datasheet preview – TGA2814-SM

Datasheet Details

Part number TGA2814-SM
Manufacturer TriQuint Semiconductor
File Size 1.22 MB
Description GaN Power Amplifier
Datasheet download datasheet TGA2814-SM Datasheet
Additional preview pages of the TGA2814-SM datasheet.

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Full PDF Text Transcription

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Applications • Military Radar • Commercial Radar • Wideband Amplifiers TGA2814-SM 3.1 – 3.5 GHz 80W GaN Power Amplifier Product Features • Frequency Range: 3.1 – 3.5 GHz • Output Power: 49.5 dBm (at Pin = 25 dBm) • Power Gain > 24 dB (at Pin = 25 dBm) • PAE: 55% (at Pin = 25 dBm) • Bias: VD = 30 V, IDQ = 200 mA, VG = –2.90 V Typical • Package Dimensions: 7.0 x 7.0 x 0.85 mm General Description TriQuint’s TGA2814-SM is a high-power, S-band amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25).The TGA2814-SM covers 3.1 – 3.5 GHz and provides > 80 W of saturated output power, 24 dB of large-signal gain, and achieves 55 % power-added efficiency. The TGA2814-SM can also support a variety of operating conditions to best support system requirements.
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