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TGF2025 - 250 um Discrete GaAs pHEMT

Description

The TriQuint TGF2025 is a discrete 250 micron pHEMT which operates from DC to 20 GHz.

The TGF2025 is fabricated using TriQuint’s proven standard 0.25 um power pHEMT production process.

Features

  • Frequency Range: DC - 20 GHz.
  • 24 dBm Typical Output Power - P1dB.
  • 14 dB Typical Gain at 12 GHz.
  • 58% Typical PAE at 12 GHz.
  • 0.9 dB Typical NF at12 GHz.
  • No Vias.
  • Technology: 0.25 um GaAs pHEMT.
  • Chip Dimensions: 0.41 x 0.34 x 0.10 mm Functional Block Diagram Drain Gate Source General.

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Datasheet preview – TGF2025

Datasheet Details

Part number TGF2025
Manufacturer TriQuint Semiconductor
File Size 397.86 KB
Description 250 um Discrete GaAs pHEMT
Datasheet download datasheet TGF2025 Datasheet
Additional preview pages of the TGF2025 datasheet.

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Applications • Defense & Aerospace • High-Reliability • Test and Measurement • Commercial • Broadband Wireless TGF2025 250 um Discrete GaAs pHEMT Product Features • Frequency Range: DC - 20 GHz • 24 dBm Typical Output Power - P1dB • 14 dB Typical Gain at 12 GHz • 58% Typical PAE at 12 GHz • 0.9 dB Typical NF at12 GHz • No Vias • Technology: 0.25 um GaAs pHEMT • Chip Dimensions: 0.41 x 0.34 x 0.10 mm Functional Block Diagram Drain Gate Source General Description The TriQuint TGF2025 is a discrete 250 micron pHEMT which operates from DC to 20 GHz. The TGF2025 is fabricated using TriQuint’s proven standard 0.25 um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
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