TGF2025 Datasheet | TriQuint Semiconductor

Applications - Defense & Aerospace - High-Reliability - Test and Measurement - mercial - Broadband Wireless 250 um Discrete Ga As p HEMT Product Features - Frequency Range: DC - 20 GHz - 24 d Bm Typical Output Power - P1d B - 14 d B Typical Gain at 12 GHz - 58% Typical PAE at 12 GHz - 0.9 d B Typical NF at12 GHz - No Vias - Technology: 0.25 um Ga As p HEMT - Chip Dimensions: 0.41 x 0.34 x 0.10 mm Functional Block Diagram Drain Gate Source General Description The Tri Quint TGF2025 is a discrete 250 micron p HEMT which operates from DC to 20 GHz. The TGF2025 is fabricated using Tri Quint’s proven standard 0.25 um power p HEMT production process. This process Features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2025 typically provides 24 d Bm of output power at P1d B with gain of 14 d B and 58% power-added efficiency at 1 d B pression. This performance makes the TGF2025 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. The TGF2025 is lead-free and Ro HS pliant. Pad Configuration Pad Dimensions G (71um X 71um) D (71um X 71um) S (121um X 71um) Terminals Gate Drain...