TGF2060 Datasheet | TriQuint Semiconductor

Applications - Defense & Aerospace - High-Reliability - Test and Measurement - mercial - Broadband Wireless 600 um Discrete Ga As p HEMT Product Features - Frequency Range: DC - 20 GHz - 28 d Bm Typical Output Power - P1d B - 12 d B Typical Gain at 12 GHz - 55% Typical PAE at 12 GHz - 1.4 d B Typical NF at12 GHz - No Vias - Technology: 0.25 um Ga As p HEMT - Chip Dimensions: 0.41 x 0.34 x 0.10 mm Functional Block Diagram Drain Gate Source General Description The Tri Quint TGF2060 is a discrete 600 micron p HEMT which operates from DC to 20 GHz. The TGF2060 is fabricated using Tri Quint’s proven standard 0.25 um power p HEMT production process. This process Features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2060 typically provides 28 d Bm of output power at P1d B with gain of 12 d B and 55% power-added efficiency at 1 d B pression. This performance makes the TGF2060 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. The TGF2060 is lead-free and Ro HS pliant. Pad Configuration Pad Dimensions G (71um X 71um) D (71um X 71um) S (121um X 71um) Terminals...