TGF2080 Datasheet | TriQuint Semiconductor

Applications - Defense & Aerospace - High-Reliability - Test and Measurement - mercial - Broadband Wireless 800um Discrete Ga As p HEMT Product Features - Frequency Range: DC - 20 GHz - 29.5 d Bm Typical Output Power - P1d B - 11.5 d B Typical Gain @ 12 GHz - 56% Typical PAE @ 12 GHz - No Vias - Technology: 0.25 um Ga As p HEMT - Chip Dimensions: 0.41 x 0.54 x 0.10 mm Functional Block Diagram General Description The Tri Quint TGF2080 is a discrete 800-Micron p HEMT which operates from DC to 20 GHz. The TGF2080 is designed using Tri Quint’s proven standard 0.25um power p HEMT production process. This process Features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2080 typically provides 29.5 d Bm of output power at P1d B with gain of 11.5 d B and 56% poweradded efficiency at 1 d B pression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and Ro HS pliant. Pad Configuration Pad Dimensions G (71um X 71um) D (71um X 71um) S (121um X 71um) S (121um X 96um) Terminals Gate Drain Source (outermost) Source (center) Ordering Information Part ECCN...