Datasheet Details
| Part number | TGF4230-EEU |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 178.78 KB |
| Description | 1.2mm Discrete HFET |
| Download | TGF4230-EEU Download (PDF) |
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| Part number | TGF4230-EEU |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 178.78 KB |
| Description | 1.2mm Discrete HFET |
| Download | TGF4230-EEU Download (PDF) |
|
|
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The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation.
Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire- bonding processes.
The TGF4230-EEU is readily assembled using automatic equipment.
T R I Q U I N T S E M I C O N D U C T O R , I N C .
TGF4230-EEU 1.2mm Discrete HFET q q q q q q PHOTO ENLARGEMENT 1200 µm X 0.5 µm HFET Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz 4230 Suitable for High-Reliability Applications 0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.
| Part Number | Description |
|---|---|
| TGF4230-SCC | 1.2 mm HFET |
| TGF4240-EPU | 2.4mm Discrete HFET |
| TGF4240-SCC | 2.4 mm HFET |
| TGF4250-EEU | 4.8 mm Discrete HFET |
| TGF4250-SCC | 4.8 mm HFET |
| TGF4260-EPU | 9.6mm Discrete HFET |
| TGF4260-SCC | 9.6 mm HFET |
| TGF4112-EPU | 12 mm Discrete HFET |
| TGF4118-EPU | 18 mm Discrete HFET |
| TGF4124-EPU | 24 mm Discrete HFET |