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TGF4230-EEU
1.2mm Discrete HFET
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PHOTO ENLARGEMENT
1200 µm X 0.5 µm HFET Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz
4230
Suitable for High-Reliability Applications 0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.)
DESCRIPTION
The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire- bonding processes.
TGF4230-EEU Datasheet
