TGF4230-EEU Datasheet | TriQuint Semiconductor

R , C . 1.2mm Discrete HFET q q q q q q PHOTO ENLARGEMENT 1200 µm X 0.5 µm HFET Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz Suitable for High-Reliability Applications 0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.) DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond - pad and backside metalization is gold plated for patibility with eutectic alloy attach...