TGF4250-EEU
TGF4250-EEU is 4.8 mm Discrete HFET manufactured by TriQuint Semiconductor.
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4.8 mm Discr ete HFET q q q q q q
PHOTO ENLARGEMENT
4800 µm x 0.5 µm HFET Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5
- GHz Suitable for high reliability applications
0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.)
DESCRIPTION
The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and Class AB operation. Typical performance at 2- GHz is 34
- dBm power output, 13
- dB gain, and 63% PAE. Bond pad and...
