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TGF4250-EEU - 4.8 mm Discrete HFET

Description

The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10.

5- GHz in Class A and Class AB operation.

Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE.

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Datasheet Details

Part number TGF4250-EEU
Manufacturer TriQuint Semiconductor
File Size 179.90 KB
Description 4.8 mm Discrete HFET
Datasheet download datasheet TGF4250-EEU Datasheet
Additional preview pages of the TGF4250-EEU datasheet.

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T R I Q U I N T S E M I C O N D U C T O R , I N C . TGF4250-EEU 4.8 mm Discr ete HFET q q q q q q PHOTO ENLARGEMENT 4800 µm x 0.5 µm HFET Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications 4250 0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.) DESCRIPTION The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE.
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