TQP5523 Datasheet | TriQuint Semiconductor

Features - Fully Integrated, 802.11ac Power Amplifier Module With Power Detector - Internally Matched Input/Output - Temperature pensated Bias Network - High Gain = 32 d B - Integrated CMOS patible Logic and Shutdown - Typ. POUT=+23.5 d Bm, EVM=- 30 d B MCS7/HT40 802.11n - Typ. POUT =+16 d Bm, EVM=- 40 d B MCS9/VHT80 802.11ac - Typ. POUT=+21 d Bm, EVM=- 37 d B MCS9/VHT80 802.11ac - Supply Voltage: +3.3 V to +5.0 V - Leadless 4.0 x 4.0 x 0.85 mm SMT Pb-Free NC NC NC NC DET Vcc1 Vcc2 Vcc3 GND GND 4 x 4 mm 20-pin leadless SMT Package Functional Block Diagram General Description Pin Configuration The TQP5523 is high power WLAN power amplifier module that contains internally matched 3-stage PA, pensated DC biasing circuit and output power detector. This PA module provides high gain (32 d B), high linearity, industry leading EVM floor, and excellent spectral purity for wideband OFDM applications. The architecture and interface are optimized for most stringent EVM requirements of next generation 802.11.ac WLAN devices. The PA module features chipset logic patible control voltages that draw very low current to facilitate ease of use and patibility with current and future transceiver generation. With its optimized power dissipation, the amplifier module is well suited for implementation into next generation MIMO configurations and well designed to work with or without digital pre-distortion (DPD). The TQP5523 is manufactured in Tri Quint’s highreliability HBT technology and is assembled in a small footprint 4.0 x 4.0 x 0.85 mm 20-pin QFN package. Pin No. 1, 6, 7, 8, 9 2, 4, 11,12,14,15,16,17 3 5 10 13 18 / 19 / 20 Backside Paddle Label NC GND RFIN PA_EN DET RFOUT VCC3 / VCC2 / VCC1 RF/DC Ground Ordering Information Part No. Description High Power WLAN PA TQP5523-EVB Evaluation Board Standard T/R size = 2500 pieces on 13” reel Datasheet: Rev E 02-03-15 © 2015 Tri Quint - 1 of 10 - Disclaimer: Subject to change without notice .triquint. High Power 5 GHz...