TQP0102 - GaN Power Transistor

Product Overview

TriQuint Semiconductor

Part number	TQP0102
Manufacturer	TriQuint Semiconductor
File Size	369.56 KB
Description	GaN Power Transistor
Datasheet	TQP0102 Datasheet
Additional preview pages of the TQP0102 datasheet.

The TQP0102 is a wide band over-molded QFN discrete GaN power amplifier.

The device is a single stage unmatched power amplifier transistor.

The TQP0102 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell applications.

Operating Frequency Range: DC to 4 GHz.
Output Power (PSAT): 5 W.
Drain Efficiency: 68%.
Linear Gain: 19 dB.
Package Dimensions: 3 x 3 x 0.85 mm 16 Pin 3x3mm QFN Functional Block Diagram N/C 1 VG, RF In 2 N/C 3 N/C 4 16 15 14 13 12 N/C 11 VD, RF Out 10 VD, RF Out 9 N/C 5678 General.

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Published: Sep 30, 2016 |