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TQP15 - 0.15 um D-mode pHEMT Foundry Service

General Description

TriQuint’s TQP15 process is based on our production-released TQP13 processes.

TQP15 is a breakthrough technology offering both high breakdown voltage and high frequency/ gain capability all within an optical process technology that enables commercialization of mmw markets.

Key Features

  • D-Mode, -1.0 V Vp.
  • InGaAs Active Layer pHEMT Process.
  • 0.15 µm Low Cost Optical Lithography Gates.
  • High Density Interconnects:.
  • 1 Global.
  • 1 Local.
  • High-Q Passives.
  • Thin Film Resistors.
  • High Value Capacitors (620 pF/mm2.
  • Backside Vias Optional.
  • Based on Production TQP13 Processes Global Plated Metal 2 (4 um) MIM Capacitor NiCr or HVR Resistor K55 Bell Metal Bell Metal (.

📥 Download Datasheet

Datasheet Details

Part number TQP15
Manufacturer TriQuint Semiconductor
File Size 375.89 KB
Description 0.15 um D-mode pHEMT Foundry Service
Datasheet download datasheet TQP15 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TQP15 0.15 um D-mode pHEMT Foundry Service Process Cross Section Diagram Updated Process Diagram Passivation Nitride Features • D-Mode, -1.0 V Vp • InGaAs Active Layer pHEMT Process • 0.15 µm Low Cost Optical Lithography Gates • High Density Interconnects: • 1 Global • 1 Local • High-Q Passives • Thin Film Resistors • High Value Capacitors (620 pF/mm2 • Backside Vias Optional • Based on Production TQP13 Processes Global Plated Metal 2 (4 um) MIM Capacitor NiCr or HVR Resistor K55 Bell Metal Bell Metal (<1 um) CTOP K55 Bell Metal-Local Interconnect (<1 um) BCB Ohmic WRCS N+ Pseudomorphic channel Damage Isolation Implant Process Description TriQuint’s TQP15 process is based on our production-released TQP13 processes.