Datasheet Summary
0.15 um D-mode pHEMT Foundry Service Process Cross Section Diagram
Updated Process Diagram
Passivation Nitride
Features
- D-Mode, -1.0 V Vp
- InGaAs Active Layer pHEMT Process
- 0.15 µm Low Cost Optical Lithography Gates
- High Density Interconnects:
- 1 Global
- 1 Local
- High-Q Passives
- Thin Film Resistors
- High Value Capacitors (620 pF/mm2
- Backside Vias Optional
- Based on Production TQP13 Processes
Global Plated Metal 2 (4 um)
MIM Capacitor NiCr or HVR Resistor
K55 Bell Metal Bell Metal (<1 um) CTOP K55 Bell Metal-Local Interconnect (<1 um)
Ohmic WRCS N+ Pseudomorphic channel
Damage Isolation Implant
Process Description
TriQuint’s TQP15 process is based on our...