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TQP770001 - Bluetooth Two Stage (HBT) Power Amplifier

Description

The TQP770001 Bluetooth PA is designed on TriQuint’s advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness.

Features

  • Functional Block Diagram.
  • InGaP HBT Technology Bluetooth v2.0 class 1 systems High Efficiency: 50% @ 21.5dBm EDR (Enhanced Data Rate) Compliant Under EDR modulation, its low AM-AM and AM-PM distortion guarantee high modulation accuracy Will operate under Bluetooth FSK, 8DPSK, and Pi/4-DQPSK modulations Optimized for 50 ohm System Integrated bias controller with a power control (variable gain) function Small 12-pin QFN, 2x2mm module Lead-free 260°C.

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Datasheet Details

Part number TQP770001
Manufacturer TriQuint Semiconductor
File Size 289.97 KB
Description Bluetooth Two Stage (HBT) Power Amplifier
Datasheet download datasheet TQP770001 Datasheet

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Full PDF Text Transcription

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TQP770001 Preliminary Data Sheet Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant) Features Functional Block Diagram • • • • • InGaP HBT Technology Bluetooth v2.0 class 1 systems High Efficiency: 50% @ 21.5dBm EDR (Enhanced Data Rate) Compliant Under EDR modulation, its low AM-AM and AM-PM distortion guarantee high modulation accuracy Will operate under Bluetooth FSK, 8DPSK, and Pi/4-DQPSK modulations Optimized for 50 ohm System Integrated bias controller with a power control (variable gain) function Small 12-pin QFN, 2x2mm module Lead-free 260°C RoHS Compliant Full ESD Protection • Product Description The TQP770001 Bluetooth PA is designed on TriQuint’s advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness.
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