TQP770001 Datasheet Bluetooth Two Stage (HBT) Power Amplifier

Manufacturer: TriQuint Semiconductor

Overview: TQP770001 Preliminary Data Sheet Bluetooth Two Stage (HBT) Power Amplifier (EDR.

TQP770001 bluetooth two stage (hbt) power amplifier by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	TQP770001
Manufacturer	TriQuint Semiconductor
File Size	289.97 KB
Description	Bluetooth Two Stage (HBT) Power Amplifier
Download	TQP770001 Download (PDF)

General Description

The TQP770001 Bluetooth PA is designed on TriQuint’s advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness.

The PA is a two-stage design requiring several SMD tuning www.DataSheet4U.com elements for input and output matching, gain shaping, and bias injection.

Key Features

Functional Block Diagram.
InGaP HBT Technology Bluetooth v2.0 class 1 systems High Efficiency: 50% @ 21.5dBm EDR (Enhanced Data Rate) Compliant Under EDR modulation, its low AM-AM and AM-PM distortion guarantee high modulation accuracy Will operate under Bluetooth FSK, 8DPSK, and Pi/4-DQPSK modulations Optimized for 50 ohm System Integrated bias controller with a power control (variable gain) function Small 12-pin QFN, 2x2mm module Lead-free 260°C.

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