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TSB60R190S1 - N-Channel MOSFET

Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.16Ω.
  • Ultra Low gate charge (typ. Qg = 70nC).
  • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
  • Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Av.

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Datasheet Details

Part number TSB60R190S1
Manufacturer Truesemi
File Size 1.11 MB
Description N-Channel MOSFET
Datasheet download datasheet TSB60R190S1 Datasheet
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TSB60R190S1 600V 20A N-Channel SJ-MOSFET TSB60R190S1 600V 20A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low gate charge (typ.
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