Datasheet4U Logo Datasheet4U.com

TSD65R420S1 - N-Channel MOSFET

Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 700V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.38Ω.
  • Ultra Low gate charge (typ. Qg = 38nC).
  • 100% avalanche tested TO-252 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
  • Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (No.

📥 Download Datasheet

Datasheet Details

Part number TSD65R420S1
Manufacturer Truesemi
File Size 687.24 KB
Description N-Channel MOSFET
Datasheet download datasheet TSD65R420S1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSD635 Asymmetrical Thyristor SGS-Thomson Microelectronics
TSD-1251 2.25 Watt SIP DC/DC Converters Premier Magnetics
TSD-515 2.25 Watt SIP DC/DC Converters Premier Magnetics
TSD0033-728WT Two Terminals Schottky Barrier Diode TAITRON
TSD035 Asymmetrical Thyristor SGS-Thomson Microelectronics

Other Datasheets by Truesemi

Part Number Description
TSD65R2K3S1 N-Channel MOSFET
TSD65R380WT N-Channel MOSFET
TSD65R600WT N-Channel MOSFET
TSD65R700S1 N-Channel MOSFET
TSD65R950S1 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSD65R420S1 650V 10.5A N-Channel SJ-MOSFET TSD65R420S1 650V 10.5A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.38Ω • Ultra Low gate charge (typ.
Published: |