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TSD65R700S1 - N-Channel MOSFET

Features

  • Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
  • 700V @TJ = 150 ℃.

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Datasheet Details

Part number TSD65R700S1
Manufacturer Truesemi
File Size 757.05 KB
Description N-Channel MOSFET
Datasheet download datasheet TSD65R700S1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSD65R700S1/TSU65R700S1 650V 7A N-Channel SJ-MOSFET TSD65R700S1/TSU65R700S1 650V 7A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.6Ω • Ultra Low gate charge (typ.
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