TSF12N60M - 600V N-Channel MOSFET

Product Overview

Truesemi

Datasheet Details

Part number	TSF12N60M
Manufacturer	Truesemi
File Size	346.97 KB
Description	600V N-Channel MOSFET
Datasheet	TSF12N60M Datasheet
Additional preview pages of the TSF12N60M datasheet.

Product details

Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1).

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Published: Nov 21, 2015 |