TSF10N65M - N-Channel MOSFET

Product Overview

Truesemi

Datasheet Details

Part number	TSF10N65M
Manufacturer	Truesemi
File Size	1.22 MB
Description	N-Channel MOSFET
Datasheet	TSF10N65M Datasheet
Additional preview pages of the TSF10N65M datasheet.

Product details

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

10.0A,650V,Max. RDS(on)=1.0Ω @ VGS =10V.
Low gate charge(typical 48nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Aval.

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Published: Apr 12, 2017 |