TSF10N65M
TSF10N65M is N-Channel MOSFET manufactured by Truesemi.
Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 10.0A,650V,Max.RDS(on)=1.0Ω @ VGS =10V
- Low gate charge(typical 48n C)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
IDM EAS EAR dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC = 25℃ TC = 100℃
Pulsed Drain Current
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃) -Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
- Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
TSP10N65M TSF10N65M
± 30
10.0-...
