TSF10N65M - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSF10N65M
Manufacturer	Truesemi
File Size	1.22 MB
Description	N-Channel MOSFET
Datasheet	TSF10N65M Datasheet
Additional preview pages of the TSF10N65M datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

10.0A,650V,Max. RDS(on)=1.0Ω @ VGS =10V.
Low gate charge(typical 48nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Aval.

📁 Similar Datasheet

TSF10N60C - 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)
TSF10H100C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H120C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H150C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H200C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10U60C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF110D00A-S4 - Saw Filters (Token)
TSF110D00B-S1 - Saw Filters (Token)

Other Datasheets by Truesemi

Published: Apr 12, 2017 |