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TSF10N80M Datasheet N-channel MOSFET

Manufacturer: Truesemi

Overview: TSF10N80M TSF10N80M 800V N-Channel MOSFET General.

Datasheet Details

Part number TSF10N80M
Manufacturer Truesemi
File Size 309.73 KB
Description N-Channel MOSFET
Datasheet TSF10N80M-Truesemi.pdf

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • 10.0A,800V,Max. RDS(on)=1.10 Ω @ VGS =10V.
  • Low gate charge(typical 45nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avala.

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