Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- 650V @TJ = 150 ℃.
- Typ. RDS(on) = 0.38Ω.
- Ultra Low Gate Charge (typ. Qg = 35nC).
- 100% avalanche tested.
- Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
TSB11N60S
11.
- 8.5.
- IDM Drain Current - Pulsed
(Note 1)
40.
- VGSS
Gate-Source voltage
EAS.
TSF11N60S Datasheet
