TSF11N60S
TSF11N60S is N-Channel MOSFET manufactured by Truesemi.
Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency.
Features
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.38Ω
- Ultra Low Gate Charge (typ. Qg = 35n C)
- 100% avalanche tested
- Rohs pliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
TSB11N60S
11- 8.5-
IDM Drain Current
- Pulsed
(Note 1)
40-
VGSS
Gate-Source...
