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TSF13N50M - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 13A,500V,Max. RDS(on)=0.48 Ω @ VGS =10V.
  • Low gate charge(typical 45nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanc.

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Datasheet Details

Part number TSF13N50M
Manufacturer Truesemi
File Size 762.47 KB
Description N-Channel MOSFET
Datasheet download datasheet TSF13N50M Datasheet
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TSP13N50M/TSF13N50M TSP13N50M/TSF13N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 13A,500V,Max.RDS(on)=0.
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