Datasheet Details
| Part number | TSF16N65M |
|---|---|
| Manufacturer | Truesemi |
| File Size | 386.06 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 TSF16N65M Datasheet
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Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- 16A,650V,Max. RDS(on)=0.5 Ω @ VGS =10V.
- Low gate charge(typical 50nC).
- High ruggedness.
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR IAR PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (No.