TSF16N65MR - N-Channel MOSFET

Product Overview

Truesemi

Part number	TSF16N65MR
Manufacturer	Truesemi
File Size	385.83 KB
Description	N-Channel MOSFET
Datasheet	TSF16N65MR Datasheet
Additional preview pages of the TSF16N65MR datasheet.

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

16A,650V,Max. RDS(on)=0.5 Ω @ VGS =10V.
Low gate charge(typical 50nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR IAR PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (No.

📁 Similar Datasheet

TSF163D00A-D2 - Saw Filters (Token)
TSF163D00B-S4 - Saw Filters (Token)
TSF10H100C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H120C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H150C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H200C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10N60C - 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)
TSF10U60C - Trench Schottky Rectifier (Taiwan Semiconductor)

Other Datasheets by Truesemi

Published: Apr 12, 2017 |