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TSF32N20M - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 32A,200V,Max. RDS(on)=0.085 Ω @ VGS =10V.
  • Low gate charge(typical 85nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalan.

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Datasheet Details

Part number TSF32N20M
Manufacturer Truesemi
File Size 834.36 KB
Description N-Channel MOSFET
Datasheet download datasheet TSF32N20M Datasheet
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TSP32N20M/TSF32N20M TSP32N20M/TSF32N20M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 32A,200V,Max.RDS(on)=0.
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