Datasheet4U Logo Datasheet4U.com

TSF65R380WT - N-Channel MOSFET

Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 700V @TJ = 150 ℃.
  • Max. RDS(on) = 0.38Ω.
  • Ultra Low gate charge (typ. Qg = 17.5nC).
  • 100% avalanche tested Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) 650 11.
  • 7.
  • IDM Drain Current.
  • Pulsed (Note 1) 33.
  • VGSS Gate-Source voltage ±30 EAS PD TJ, TSTG TL Singl.

📥 Download Datasheet

Datasheet Details

Part number TSF65R380WT
Manufacturer Truesemi
File Size 432.04 KB
Description N-Channel MOSFET
Datasheet download datasheet TSF65R380WT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSF-6522 No-Clean Tacky Soldering Flux ETC
TSF05A20 FRD Nihon Inter Electronics
TSF05A20-11A FRED Nihon Inter Electronics
TSF05A40 FRD Nihon Inter Electronics
TSF05A40-11A FRED Nihon Inter Electronics

Other Datasheets by Truesemi

Part Number Description
TSF65R300S1 N-Channel MOSFET
TSF65R190S1 N-Channel MOSFET
TSF65R420S1 N-Channel MOSFET
TSF65R500S1 N-Channel MOSFET
TSF65R600WT N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSF65R380WT 650V 11A N-Channel SJ-MOSFET TSF65R380WT 650V 11A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • 700V @TJ = 150 ℃ • Max. RDS(on) = 0.38Ω • Ultra Low gate charge (typ. Qg = 17.
Published: |