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TSF65R600WT - N-Channel MOSFET

Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 700V @TJ = 150 ℃.
  • Max. RDS(on) = 0.6Ω.
  • Ultra Low gate charge (typ. Qg = 14nC).
  • 100% avalanche tested Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) 650 7.5.
  • 4.7.
  • IDM Drain Current.
  • Pulsed (Note 1) 22.
  • VGSS Gate-Source voltage ±30 EAS PD TJ, TSTG TL Sin.

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Datasheet Details

Part number TSF65R600WT
Manufacturer Truesemi
File Size 459.91 KB
Description N-Channel MOSFET
Datasheet download datasheet TSF65R600WT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSF65R380WT 650V 7.5A N-Channel SJ-MOSFET TSF65R600WT 650V 7.5A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • 700V @TJ = 150 ℃ • Max. RDS(on) = 0.6Ω • Ultra Low gate charge (typ.
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