Datasheet4U Logo Datasheet4U.com

TSF65R950S1 - N-Channel MOSFET

Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 700V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.85Ω.
  • Ultra Low gate charge (typ. Qg = 15nC).
  • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
  • Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Curren.

📥 Download Datasheet

Datasheet Details

Part number TSF65R950S1
Manufacturer Truesemi
File Size 704.42 KB
Description N-Channel MOSFET
Datasheet download datasheet TSF65R950S1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSF-6522 No-Clean Tacky Soldering Flux ETC
TSF05A20 FRD Nihon Inter Electronics
TSF05A20-11A FRED Nihon Inter Electronics
TSF05A40 FRD Nihon Inter Electronics
TSF05A40-11A FRED Nihon Inter Electronics

Other Datasheets by Truesemi

Part Number Description
TSF65R190S1 N-Channel MOSFET
TSF65R300S1 N-Channel MOSFET
TSF65R380WT N-Channel MOSFET
TSF65R420S1 N-Channel MOSFET
TSF65R500S1 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSF65R950S1 650V 4.5A N-Channel SJ-MOSFET TSF65R950S1 650V 4.5A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.85Ω • Ultra Low gate charge (typ.
Published: |