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TSF8N70MR - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 7.5A,700V,Max. RDS(on)=1.4 Ω @ VGS =10V.
  • Low gate charge(typical 21nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR IAR PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (N.

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Datasheet Details

Part number TSF8N70MR
Manufacturer Truesemi
File Size 370.81 KB
Description N-Channel MOSFET
Datasheet download datasheet TSF8N70MR Datasheet
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TSF8N70MR TSF8N70MR 700V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 7.5A,700V,Max.RDS(on)=1.
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