TSP16N50M Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge...
TSP16N50M Key Features
- 16.0A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
- Low gate charge ( typical 45nC)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability