TSP60R650S1 Key Features
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.58Ω
- Ultra Low gate charge (typ. Qg = 25nC)
- 100% avalanche tested
- Part: TSP60R650S1
- Manufacturer: Truesemi
- Size: 705.81 KB
Related Truesemi Datasheets
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TSP60R650S1 Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in...