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TSP630M - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 9.5A,200V,Max. RDS(on)=0.40 Ω @ VGS =10V.
  • Low gate charge(typical 20nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalan.

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Datasheet preview – TSP630M

Datasheet Details

Part number TSP630M
Manufacturer Truesemi
File Size 340.49 KB
Description N-Channel MOSFET
Datasheet download datasheet TSP630M Datasheet
Additional preview pages of the TSP630M datasheet.

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Full PDF Text Transcription

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TSP630M/TSF630M TSP630M/TSF630M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 9.5A,200V,Max.RDS(on)=0.
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