Datasheet4U Logo Datasheet4U.com

TSP8N65M - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V.
  • Low gate charge ( typical 29nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D GDS TO-220 GD S TO-220F.
  • ◀▲ G.
  • S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sour.

📥 Download Datasheet

Datasheet preview – TSP8N65M

Datasheet Details

Part number TSP8N65M
Manufacturer Truesemi
File Size 217.44 KB
Description N-Channel MOSFET
Datasheet download datasheet TSP8N65M Datasheet
Additional preview pages of the TSP8N65M datasheet.

📁 Similar Datasheet

  • TSP8A100S - Trench Schottky Rectifier (Taiwan Semiconductor)
  • TSP-BCMU360 - Battery Controller Module (TRACO POWER)
  • TSP058A - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058B - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058C - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058SA - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058SB - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058SC - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP064AL - LOW CAPACITANCE THYRISTOR (FCI)
  • TSP064ALL - LOW CAPACITANCE THYRISTOR (FCI)
Other Datasheets by Truesemi

Full PDF Text Transcription

Click to expand full text
TSP8N65M / TSF8N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 7.5A, 650V, RDS(on) = 1.
Published: |