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TSU5N60M Datasheet N-channel MOSFET

Manufacturer: Truesemi

Overview: TSD5N60M / TSU5N60M TSD5N60M/TSU5N60M 600V N-Channel MOSFET General.

Datasheet Details

Part number TSU5N60M
Manufacturer Truesemi
File Size 289.66 KB
Description N-Channel MOSFET
Datasheet TSU5N60M-Truesemi.pdf

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • - 3.0A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS GDS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalan.

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TSU5N60M Distributor