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1481 - P-Channel MOSFET

General Description

The 1481 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Key Features

  • VDS = -12V,ID = -5.5A RDS(ON) < 38mΩ @ VGS=-2.5V RDS(ON) < 26mΩ @ VGS=-4.5V D G S Schematic diagram.
  • Advanced trench MOSFET process technology.
  • Ultra low on-resistance with low gate charge.

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Datasheet Details

Part number 1481
Manufacturer Tuofeng Semiconductor
File Size 363.59 KB
Description P-Channel MOSFET
Datasheet download datasheet 1481 Datasheet

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 1481 NCE P-Channel Enhancement Mode Power MOSFET Description The 1481 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -5.5A RDS(ON) < 38mΩ @ VGS=-2.5V RDS(ON) < 26mΩ @ VGS=-4.