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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4611
60V Dual P + N-Channel MOSFET
Product Summary
N-Channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 38mΩ (VGS=10V) < 45mΩ (VGS=4.5V)
100% UIS Tested 100% Rg Tested
P-Channel -60V -4.9A
< 65mΩ (VGS = -10V) < 78mΩ (VGS = -4.5V)
100% UIS Tested 100% Rg Tested
SOIC-8 Top View
D2 D1
S2 D2
G2 D2
S1 D1 G1 D1 G2
G1
S2 S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current A
TA=25°C
ID
6.3
Pulsed Drain Current B
IDM 40
Power Dissipation
TA=25°C
Junction and Storage Temperature Range
PD TJ, TSTG
2 -55 to 150
Max p-channel -60 ±20
-4.
4611 Datasheet
