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8810 - Dual N-Channel MOSFET

Datasheet Summary

Description

The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Features

  • VDS (V) = 20V ID = 6A (V GS = 4.5V) RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) ESD Rating: 2000V HBM D1/D2 S1 S1 G1 TSSOP-8 Top View 18 27 36 45 D1/D2 S2 S2 G2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM Power Dissipation A TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 6 30 1.5.

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Datasheet Details

Part number 8810
Manufacturer Tuofeng Semiconductor
File Size 241.90 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet 8810 Datasheet
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    Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets ROHS & Sony 259 specifications). 8810 is electrically identical. Features VDS (V) = 20V ID = 6A (V GS = 4.5V) RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.
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