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9435 - P-Channel MOSFET

Datasheet Summary

Description

-30V/-5.3A, RDS(ON) = 60mΩ(typ.) @ VGS = -10V RDS(ON) = 90mΩ(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO 8 S SS Power Management in Notebook Computer, Port

Features

  • Pin.

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Datasheet Details

Part number 9435
Manufacturer Tuofeng Semiconductor
File Size 136.66 KB
Description P-Channel MOSFET
Datasheet download datasheet 9435 Datasheet
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    Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-5.3A, RDS(ON) = 60mΩ(typ.) @ VGS = -10V RDS(ON) = 90mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO − 8 S SS • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G DD DD P-Channel MOSFET Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol VDSS VGSS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous TA = 25°C Maximum Drain Current – Pulsed Rating -30 ±20 -4.
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