SSS12N60 Overview
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET 主要参数 MAIN CHARACTERISTICS ID 12 A VDSS 600 V Rdson（@Vgs=10V） 0.65Ω Qg 39nC 封装 Package 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS 产品特性 z低栅极电荷 z低 Crss (典型值 23pF) z开关速度快 z产品全部经过雪崩测试 z高抗 dv/dt 能力 zRoHS.
SSS12N60 Key Features
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- 100 nA
- 100 nA
- 0.56 0.65 Ω
- 1790 2410 pF
- 175 229 pF
- 23 31 PF