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DU2860 - RF MOSFET Power Transistor

Features

  • Power Transistor, 6OW, 28V DU2860T v2.00 -.
  • - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Specifications Subjectto North America: CISS Coss CRSS GP % VSWR-T Change WAhout Notice. 135 120 24 13 - pF pF pF dB % - V,,=28.0 V, F.

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Datasheet Details

Part number DU2860
Manufacturer Tyco Electronics
File Size 182.11 KB
Description RF MOSFET Power Transistor
Datasheet download datasheet DU2860 Datasheet
Additional preview pages of the DU2860 datasheet.

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Full PDF Text Transcription

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* an AMP company =zs.--E-= -=---- .-----= - E RF MOSFET 2 - 175 MHz Features Power Transistor, 6OW, 28V DU2860T v2.00 -*- N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Specifications Subjectto North America: CISS Coss CRSS GP % VSWR-T Change WAhout Notice. 135 120 24 13 - pF pF pF dB % - V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, I,,=300 mA, P,,=60.0 V,,=28.0 V, I,,=300 mA, P,,=60.0 W, F=l75 MHz W, F=175 MHz 60 - 3O:l V,,=28.0 V, I,,=300 mA, P,#GO.O W, F=l75 MHz M/A-COM, Tel.
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