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DU2860T
RF Power MOSFET Transistor 60 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature
VDS VGS IDS PD TJ
65 20 12 159 200
Storage Temperature Thermal Resistance
TSTG θJC
-65 to +150 1.1
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz) 30
ZIN (Ω) 9.0 - j4.0
ZLOAD (Ω) 6.0 +j0.0
50
10.0 - j6.5
5.0 + j2.0
100
6.0 - j5.5
4.0 + j3.0
200
1.1 - j3.0
2.0 + j1.
DU2860T Datasheet
