DU2860T Datasheet | MACOM Technology Solutions

Features - N-Channel enhancement mode device - DMOS structure - Lower capacitances for broadband operation - High saturated output power - Lower noise figure than bipolar devices - Ro HS pliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature VDS VGS IDS PD TJ 65 20 12 159 200 Storage Temperature Thermal Resistance TSTG θJC -65 to +150 1.1 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 9.0 - j4.0 ZLOAD (Ω) 6.0 +j0.0 - j6.5 5.0 + j2.0 - j5.5 4.0 + j3.0 - j3.0 2.0 + j1.9 VDD = 28V, IDQ = 300m A, POUT = 60 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. Package...