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DU2860U - RF MOSFET Power Transistor

Features

  • Power Transistor, 6OW, 28V DU2860U v2.00 A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C IWA-COM, Inc. North America: Specifications Subject to Change Without Notice. Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (134.

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Datasheet Details

Part number DU2860U
Manufacturer Tyco Electronics
File Size 203.16 KB
Description RF MOSFET Power Transistor
Datasheet download datasheet DU2860U Datasheet
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Full PDF Text Transcription

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s2zz-f rgy== e -A5g =r- ---=- an AMP company RF MOSFET 2 - 175 MHz Features Power Transistor, 6OW, 28V DU2860U v2.00 A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C IWA-COM, Inc. North America: Specifications Subject to Change Without Notice. Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +I4 (1344) 300 020 RF MOSFET Power Transistor, 6OW, 28V v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY V,,=28 =z V 1,0=300 mA P,,,.,.
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