DU2860T Datasheet | Tyco Electronics

Features Power Transistor, 6OW, 28V DU2860T v2.00 -- - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Specifications Subjectto North America: CISS Coss CRSS GP % VSWR-T Change WAhout Notice. 135 120 24 13 - p F p F p F d B % - V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, I,,=300 m A, P,,=60.0 V,,=28.0 V, I,,=300 m A, P,,=60.0 W, F=l75 MHz W, F=175 MHz - 3O:l V,,=28.0 V, I,,=300 m A, P,#GO.O W, F=l75 MHz M/A-, Tel. (800) 3662266 Fax (800) 618-8883 n Inc. Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 6OW, 28V DU2860T v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY 25 I’,,=28 V I,,=300 m A PO,=60 W ao- EFFICIENCY V,,=28 vs FREQUENCY m A PO”,.=60 W V I,,=300 -...