M32000D4AFP
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF327/D
The RF Line
NPN Silicon RF Power Transistor
. . . designed primarily for wideband large- signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 d B @ 400 MHz
- Built- In Matching Network for Broadband Operation Using Double Match Technique
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
- Gold Metallization System for High Reliability Applications
- Characterized for 100 to 500 MHz MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Collector Current
- Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 9.0 12 250 1.43
- 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C
MRF327
80 W, 100 to 500 MHz CONTROLLED “Q” BROADBAND RF...
