MA4E2040 Description
M/A-'s MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in...
MA4E2040 Key Features
- Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations