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MA4E2040 - (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes

This page provides the datasheet information for the MA4E2040, a member of the MA4E2037 (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes family.

Datasheet Summary

Description

M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes.

These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.

Features

  • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Package Outlines 1, 2 MA4E2037 0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6).

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Datasheet preview – MA4E2040

Datasheet Details

Part number MA4E2040
Manufacturer Tyco Electronics
File Size 68.29 KB
Description (MA4E2037 - MA4E2040) GaAs Beam Lead Schottky Barrier Diodes
Datasheet download datasheet MA4E2040 Datasheet
Additional preview pages of the MA4E2040 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 MA4E2037, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Barrier Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Package Outlines 1, 2 MA4E2037 0.13 5 ± .0 10 (5.3 ± .4 ) 0.21 0 ± .0 40 (8.3 ± 1.6) Description M/A-COM's MA4E2037 single, MA4E2039 antiparallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.
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