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MA4E2099-1284 - High Barrier Silicon Schottky Diodes

General Description

The MA4E2099-1284 Bridge Octoquad is offered for high dynamic range applications.

Key Features

  • n n n n n n ODS-1284 Outline (Topview) Designed for High Dynamic Range.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Barrier Silicon Schottky Diodes: Bridge Octoquad V 2.00 MA4E2099-1284 Features n n n n n n ODS-1284 Outline (Topview) Designed for High Dynamic Range Applications Low Parasitic Capitance and Inductance Low Parasitic Resistance Recommended for DC-12GHz Uniform Electrical Characteristics with Each Junction Rugged HMIC Construction with Polyimide Scratch Protection Description The MA4E2099-1284 Bridge Octoquad is offered for high dynamic range applications. This device is constructed with Silicon High Barrier Schottky Diodes fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process to ensure electrical characteristics uniformity for each junction.