MA4E2513-1289 Datasheet PDF - Tyco Electronics Silicon Schottky Diodes Specs

MA4E2513-1289 - Silicon Schottky Diodes

Datasheet Summary

Description

The MA4E2513L-1289 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

Features

Extremely Low Parasitic Capitance and Inductance.
Extremely Small “0301” (1000 x 300um) Footprint.
Surface Mountable in Microwave Circuits, No Wirebonds Required.
Rugged HMIC Construction with Polyimide Scratch Protection.
Reliable, Multilayer Metalization with a Diffusion.
Barrier, 100% Stabilization Bake (300°C, 16 hours).
Lower Susceptibility to ESD Damage MA4E2513-1289 Series V1 The MA4E2513L-1289 SurMount Low Barrier Schottky.

Datasheet Details

Part number	MA4E2513-1289
Manufacturer	Tyco Electronics
File Size	119.86 KB
Description	Silicon Schottky Diodes
Datasheet	MA4E2513-1289 Datasheet
Additional preview pages of the MA4E2513-1289 datasheet.

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Full PDF Text Transcription

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SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Extremely Small “0301” (1000 x 300um) Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion • Barrier, 100% Stabilization Bake (300°C, 16 hours) • Lower Susceptibility to ESD Damage MA4E2513-1289 Series V1 The MA4E2513L-1289 SurMount Low Barrier Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters.

Published: Jul 23, 2007 |