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MA4SPS422 - (MA4SPS420 Series) SURMOUNT PIN Diodes

Download the MA4SPS422 datasheet PDF. This datasheet also covers the MA4SPS420 variant, as both devices belong to the same (ma4sps420 series) surmount pin diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM’s patented HMICTM process.

Key Features

  • Surface Mount 100 µm I-Region Length Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance Higher Average and Peak Power Handling MA4SPS420 Series V2 Absolute Maximum Ratings1 @ TA = +25 °C (unless otherwise specified) Parameter Forward Current Reverse Voltage Operating Temperature Absolute Maximum 250 mA l -200 V l -55 °C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4SPS420_TycoElectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4SPS420 (MA4SPS420 Series) SURMOUNT PIN Diodes
MA4SPS421 (MA4SPS420 Series) SURMOUNT PIN Diodes
MA4SPS552 Surface Mount Monolithic PIN Diode Chip
MA4ST1103-1141T High Tuning Ratio Silicon Hyperabrupt Varactor Diode
MA4ST1200 Low Tuning Voltage/Low Rs Silicon Hyperabrupt Varactor Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SURMOUNTTM PIN Diodes MA4SPS421, MA4SPS422 Features • • • • • • • Surface Mount 100 µm I-Region Length Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance Higher Average and Peak Power Handling MA4SPS420 Series V2 Absolute Maximum Ratings1 @ TA = +25 °C (unless otherwise specified) Parameter Forward Current Reverse Voltage Operating Temperature Absolute Maximum 250 mA l -200 V l -55 °C to +125 °C -55 °C to +150 °C +175 °C 1.8 W +235 °C for 10 seconds Description and Applications This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass.