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MA4SW424B-1 - Monolithic SP4T PIN Diode Switch

General Description

The MA4SW424B-1 device is a SP4T Switch with Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310.

Key Features

  • n n n Outline Drawing Frequency of Operation: 24 +/- 2 GHz Fully Integrated Bias Network Series Diode, Low Current Consumption Design : +12mA for Insertion Loss, 0 Volts for Isolation n The Device is Wire Bond Compensated at all RF Ports for RF Matching n Rugged, Fully Monolithic, Glass Encapsulated Construction.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Monolithic SP4T PIN Diode Switch With Integrated Bias Network V 1.00 MA4SW424B-1 Features n n n Outline Drawing Frequency of Operation: 24 +/- 2 GHz Fully Integrated Bias Network Series Diode, Low Current Consumption Design : +12mA for Insertion Loss, 0 Volts for Isolation n The Device is Wire Bond Compensated at all RF Ports for RF Matching n Rugged, Fully Monolithic, Glass Encapsulated Construction Description The MA4SW424B-1 device is a SP4T Switch with Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and/or shunt diodes or vias by imbedding them in a low loss, low dispersion glass.