Datasheet Summary
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Monolithic SP4T PIN Diode Switch With Integrated Bias Network
V 1.00
Features n n n
Outline Drawing
Frequency of Operation: 24 +/- 2 GHz Fully Integrated Bias Network Series Diode, Low Current Consumption Design : +12mA for Insertion Loss, 0 Volts for Isolation n The Device is Wire Bond pensated at all RF Ports for RF Matching n Rugged, Fully Monolithic, Glass Encapsulated Construction
Description
The MA4SW424B-1 device is a SP4T Switch with Integrated Bias Network utilizing M/A-'s HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and/or...