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MAAPGM0036-DIE - 1.2W Power Amplifier

Description

The MAAPGM0036-Die is a 2-stage power amplifier with on-chip bias networks.

This product is fully matched to 50 ohms on both the input and output.

It can be used as a power amplifier stage or as a driver stage in high power applications.

Features

  • 1.2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ MESFET Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility MAAPGM0036-DIE RO-P-DS-3017 B Preliminary Information.

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Full PDF Text Transcription

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1.2-3.2 GHz 1.2W Power Amplifier Features ♦ ♦ ♦ ♦ 1.2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ MESFET Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility MAAPGM0036-DIE RO-P-DS-3017 B Preliminary Information Description The MAAPGM0036-Die is a 2-stage power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance.
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