MAAPGM0036 Datasheet | Tyco Electronics

.. RO-P-DS-3075 Preliminary Information 1.2-3.2 GHz 1.2W Power Amplifier Features - 1.2 Watt Saturated Output Power Level - Variable Drain Voltage (4-10V) Operation - Self-Aligned MSAG® Process Primary Applications - - - - 2.5-2.7 GHz MMDS GPS Radar Telemetry APGM0036 YWWLLLL Description The MAAPGM0036 is a packaged, 2-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance pliance. The part is fabricated using M/A-’s Ga As Multifunction Self-Aligned Gate (MSAG®) MESFET Process. M/A-’s MSAG process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection No Connection VDD RF OUT VDD No Connection Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% IDSS) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Processing Temperature 1. Operation outside of these ranges may reduce product reliability. Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 23.0 +12.0 -3.0 730 6.6 180 -55 to +150 230 Units d Bm V V m A W °C °C °C RO-P-DS-3075 2/6 1.2-3.2 GHz 1.2W Power Amplifier Remended Operating Conditions Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance Package Base Temperature Symbol VDD VGG PIN TJ ΘJC TB...