MAAPGM0052-DIE Datasheet | Tyco Electronics

.. Amplifier, Distributed Power 4.0- 18.0 GHz Features - - - - 0.5 Watt Saturated Output Power Level Variable Drain Voltage (5-10V) Operation Ga As MSAG™ Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility - Preliminary Information Description The MAAPGM0052-Die is a 2-stage distributed power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-’s repeatable, high performance and highly reliable Ga As Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance pliance. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 500 m A2, Pin = 17 d Bm, Rg ≈ 100Ω Parameter Bandwidth Output Power 1d B pression Point Small Signal Gain Noise Figure Input VSWR Output VSWR Gate Supply Current Drain Supply Current 1. 2. 1 M/A- Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A- makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A- assume any liability whatsoever arising out of the use or application of any product(s) or information. Symbol f POUT P1d B G NF VSWR VSWR IGG IDD Typical 4.0-18.0...