MAAPGM0057-DIE Datasheet | Tyco Electronics

.. 2.0-13.0 GHz 1.2 W Power Amplifier RO-P-DS-3089 A Preliminary Information Features - - - - 1.2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility Description The MAAPGM0057-Die is a single-stage distributed power amplifier with an on chip bias network. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-’s repeatable, high performance and highly reliable Ga As Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance pliance. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications - - - - - Sat Test Instrumentation Military EW/ECM Ultra Wideband (UWB) Point-to-Point Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 10V, IDQ ≈ 510 m A2, Pin = 25 d Bm Parameter Bandwidth Output Power 1-d B pression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Noise Figure 1. 2. TB = MMIC Base Temperature Adjust VGG between - 2.5 to - 1.4 V. Symbol f POUT P1d B G VSWR VSWR IGG IDD NF Typical 2.0-13.0 31 30 7 2.2:1 2.2:1 < 5.0 < 900 8 m A m A d B Units GHz d Bm d Bm d B M/A- Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A- makes no warranty,...