Datasheet4U Logo Datasheet4U.com

MASW4060G - GaAs SP4T Switch

General Description

M/A/COM’s MASW4060G is an SPDT absorptive or reflective GaAs MESFET MMIC.

This part combines small size, low insertion loss and power consumption with high isolation.

Ideal for many applications and module use.

Key Features

  • Low Insertion Loss, 1.2 dB Typical Fast Switching Speed, 4 nS Typical Ultra Low DC Power Consumption Terminated Option RoHS.
  • Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MASW4030G GaAs SPDT Switch DC - 4 GHz Tyco
MASW-000105 GaAs SP6T 2.5 V High Power Switch M/A-COM Technology
MASW-000105 GaAs SP6T 2.5V High Power Switch Dual- / Tri- / Quad-Band GSM Applications MA-COM Technology
MASW-000822 PIN Diode SP2T 10W Switch MACOM
MASW-000823-12770T PIN Diode SP2T 13Watt Switch MACOM

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MASW-000822-12770T HMICTM PIN Diode SP2T 8 Watt Switch
MASW-001100-1190 (MASW-00x100-119x) Broadband Monolithic Silicon PIN Diode Switches
MASW-002100-1191 (MASW-00x100-119x) Broadband Monolithic Silicon PIN Diode Switches
MASW-003100-1192 (MASW-00x100-119x) Broadband Monolithic Silicon PIN Diode Switches
MASW-004100-1193 Monolithic PIN SP4T Diode Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com RoHS Compliant MASW4060G V3 Pad Layout GaAs SP4T Switch DC - 4.0 GHz Features • • • • • Low Insertion Loss, 1.2 dB Typical Fast Switching Speed, 4 nS Typical Ultra Low DC Power Consumption Terminated Option RoHS* Compliant Description M/A/COM’s MASW4060G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4060G is fabricated using a mature 1micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability. Die Size - Inches (mm) 0.076 x 0.058 x 0.010 (1.920 x 1.470 x 0.